| 摘要 |
PURPOSE: A method for manufacturing a contact hole of a semiconductor device is to provide a superior filling characteristic of a contact hole and to simplify a manufacturing process, by forming the contact hole only by a dry etching process using an HI mixture gas. CONSTITUTION: After a transistor consisting of a gate(4), a drain(3) and a source(2) is formed in a semiconductor substrate(1), the first interlayer dielectric(6) is formed. The first metal interconnection(8) is formed on the entire surface of the substrate, and the second interlayer dielectric(9) is formed. After a photoresist layer pattern is formed on the entire surface, a contact hole(14,15) is formed by a dry etching process using an HI mixture gas to expose the first metal interconnection. The photoresist layer pattern is eliminated, and the second metal interconnection filling the contact hole is formed.
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