发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING BANK-SELECTION SIGNAL GENERATOR TO REDUCE THE NUMBER OF DATA WRITING DURING MEMORY TEST, AND TEST METHOD THEREFOR
摘要 PURPOSE: A semiconductor memory device and a test method thereof are provided to reduce the number of data writing during a memory test so that the test time is reduced. CONSTITUTION: A semiconductor memory device includes a bank selection signal generator(30), a bank connector and a column selector. The bank selection signal generator(30) of 3 parts(32,34,36) generates a bank selection signal for connecting bit lines of banks to data input/output lines. The bank connector selects at least two banks during write operation, selects a bank during read operation, and connect bit lines of a selected bank to a first data lines. The column selector connects a data line of the first data lines to the data input/output line, according to each column-line selection signal of bit-line address. Thereby, the number of data writing during a memory test can be reduced.
申请公布号 KR20010001023(A) 申请公布日期 2001.01.05
申请号 KR19990019983 申请日期 1999.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, TAE SEONG
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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