CRYSTALLIZATION METHOD OF AMORPHOUS SILICON THIN FILM

摘要

PURPOSE: A method for crystallizing amorphous silicon thin film into polycrystalline silicon thin film with larger grain size is provided, by using electron beam or laser beam. CONSTITUTION: The method comprises the steps of providing an insulating substrate(2) whose one surface is coated with oxide layer(4); forming a photosensitive layer(14) on the oxide layer(4); forming about 500-2,000 Angstrom of amorphous silicon layer(6) on the photosensitive layer(14); optionally forming crystal nucleus on the silicon layer(6); and irradiating electron beam(12) onto the silicon layer(6) with the energy density not to melt some part of the silicon layer(6). Preferably the crystal nucleus is formed by using SiH4 or Si2H6 gas.