HORIZONTAL RESONATOR AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A horizontal resonator and a production method thereof are provided to simplify a structure, to mass-produce, to have the mechanical durability and to easily form on an IC(Integrated Circuit) substrate by forming the horizontal FBAR(Film Bulk Acoustic Resonator) without a reflecting layer. CONSTITUTION: An epitaxial piezo layer(32) of ZnO or AlN is formed on a semiconductor substrate(31) of Si or GaAs. A PR(photoresist) pattern layer(33) is formed by spreading a PR. The piezo layer(32) is etched to remove an unnecessary part. A PR(34) is spread to form a metal electrode. A metal film(35) is layered with a conductive material such as Al or Au. The conductive material is eliminated when the PR layers(33,34) are removed by melting. Thereby, an FBAR is completed without a reflecting layer.