METHOD FOR MANUFACTURING A METAL INTERCONNECTION CONTACT OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection contact of a semiconductor device is provided to improve stability of an exposure process, by forming a metal hard mask layer on an interlayer dielectric, by performing an etch process using a thin contact mask to form a contact hole, and by forming an Al pattern after filling the contact hole with a W plug. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10) having a predetermined lower structure. A hard mask layer(14) is formed on the interlayer dielectric. A photoresist layer pattern for a contact mask for patterning the hard mask layer is formed on the hard mask layer. The exposed hard mask layer is removed by using the photoresist layer pattern as a mask to expose an upper portion of the interlayer dielectric reserved for a contact hole. The interlayer dielectric exposed by the hard mask layer pattern is eliminated to form the contact hole. An anti-diffusion layer is formed on the entire surface of the resultant structure. A W layer is formed on the entire surface of the resultant structure. The entire surface of the W layer is etched to form a W plug inside the contact hole. An Al layer is formed on the entire surface of the resultant structure, and the Al layer, anti-diffusion layer and hard mask layer are sequentially patterned.