METHOD FOR DETERMINING AN END POINT OF A SEMICONDUCTOR ETCHING PROCESS USING PLASMA

摘要

PURPOSE: A method for determining an end point of a semiconductor etching process using plasma is provided to easily determine an etching end point in a large scale, by establishing a plurality of wavelengths emitted by a material generated in the etching process, and by using an intensity of summed wavelengths. CONSTITUTION: A plurality of wavelengths are monitored by a material generated in a process for plasma-etching an etching target material. The etching target material is plasma-etched. A plurality of wavelengths emitted by the material generated in the etching process are monitored. A total sum of intensities of the plurality of monitored wavelengths is calculated, so that an end point of the etching process is determined by a variation of the intensity of the summed wavelength.