| 摘要 |
<p>A method of forming an interconnection including the steps of forming a sacrificial material (160) that comprises a physical property that is generally insensitive to a photoreaction in a via (150) through a dielectric material (130) to a masking material (120) over a conductive material (110). The method also includes forming a trench (180) over in the dielectric material over the via (150) and removing the sacrificial material (160) from the via.</p> |
