发明名称 HEATER ARRANGEMENT FOR CRYSTAL GROWTH FURNACE
摘要 <p>A furnace (10) for growing crystals includes a plurality of growth stations (14) and first (50) and second (52) heater matrixes. Each growth station (14) has a crucible (16) and an insulating container (18) generally surrounding the crucible (16) and thermally isolating the crucible (16) from the other growth stations (14). The first (50) and second (52) heater matrices each include at least two legs (54, 56) electrically connected, each of which have at least two heaters (20, 22) electrically connected in series. Each of the growth stations (14) have at least one of the heaters (20, 22) within the first heater matrix (52) and at least one of the heaters (20, 22) within the second heater matrix (50) associated therewith. The heaters (20, 22) of the first heater matrix (50) are located above the crucibles (16) and are adapted to provide a homogeneous temperature there. The heaters (20, 22) of the second heater matrix (52) are located below the crucible (16) and are adapted to provide a temperature gradient there.</p>
申请公布号 WO2001000908(A1) 申请公布日期 2001.01.04
申请号 US2000017667 申请日期 2000.06.26
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