发明名称 |
HIGH DENSITY TUNGSTEN MATERIAL SINTERED AT LOW TEMPERATURE |
摘要 |
The invention concerns a tungsten-based sintered material, with relative mean density higher than 93 % and HV0.3 hardness >/= 400. It comprises: tungsten having a purity higher than 99.9 %, an additive consisting of nickel and/or cobalt powder in a mass percentage not more than 0.08 %, an average particle size of tungsten grains of equiaxial shape ranging between 2 and 40 mu m and uniformly distributed for a given average size; and uniformly distributed residual porosity with less than 85 % of the population of pores having a unit volume less than 4 mu m<3>. |
申请公布号 |
WO0100892(A1) |
申请公布日期 |
2001.01.04 |
申请号 |
WO2000FR01656 |
申请日期 |
2000.06.15 |
申请人 |
CIME BOCUZE;NICOLAS, GUY;MAHOT, PASCAL;VOLTZ, MARC |
发明人 |
NICOLAS, GUY;MAHOT, PASCAL;VOLTZ, MARC |
分类号 |
B22F3/10;C22C1/04;C22C27/04;F27B14/10;F27D1/00 |
主分类号 |
B22F3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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