| 摘要 |
A low switching field multi-state, multi-layer magnetic memory cell (10) including two layers of magnetic material (23, 24) stacked in parallel, overlying relationship and separated by a layer of non-magnetic material (12) so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material. |
