| 摘要 |
<p>A method for producing a semiconductor device by forming an amorphous semiconductor film on an insulating substrate, irradiating the amorphous semiconductor film with a laser beam to crystallize the amorphous semiconductor film and thereby to form a polycrystalline semiconductor film, and fabricating a transistor in the polycrystalline semiconductor film, wherein the back of the insulating substrate or the amorphous semiconductor film is irradiated with ultraviolet radiation to heat the amorphous semiconductor film to a temperature under the melting point, the amorphous semiconductor film is irradiated with a laser beam with a shape selection suitable laser beam energy density Ec at which crystal grains whose the number of nearest crystal grains is six are formed the most so as to change the amorphous semiconductor film to a polycrystalline semiconductor film, and a transistor is fabricated in the polycrystalline semiconductor film. A thin film transistor capable of operating at high speed can be fabricated with high yield.</p> |
