| 摘要 |
<p>A program execution area, a rewrite area, and a rewrite count area are provided in a flash memory. The rewrite count area comprises rewrite count management areas each managing a rewrite count corresponding to a block constituting the rewrite area. A rewrite count management area which is in the rewrite count area and which corresponds to a block of the rewrite area is composed of a bit string containing the number of bits equal to or larger than the maximum allowable rewrite count. All the bits of this bit string is set to the same value at initialization. When a block is rewritten, the value of the bit in the position which is in the rewrite count management area and which corresponds to the rewrite count of the block is inverted. <IMAGE></p> |
