发明名称 |
Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
摘要 |
<p>Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device wafer, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and a deposited oxide. <IMAGE></p> |
申请公布号 |
EP1065706(A2) |
申请公布日期 |
2001.01.03 |
申请号 |
EP20000111199 |
申请日期 |
2000.05.24 |
申请人 |
INTERSIL CORPORATION |
发明人 |
CZAGAS, JOSEPH;WOODBURY, DUSTIN;BEASOM, JAMES |
分类号 |
H01L21/22;H01L21/02;H01L21/18;H01L21/20;H01L21/225;H01L21/265;H01L21/336;H01L21/74;H01L21/762;H01L27/12;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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