发明名称 |
Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
摘要 |
<p>A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10, nitrogen is introduced from the inlet 7, and no gas is let out from within the reaction ampoule 3.</p> |
申请公布号 |
EP1065299(A2) |
申请公布日期 |
2001.01.03 |
申请号 |
EP20000113814 |
申请日期 |
2000.06.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIROTA, RYU;TATSUMI, MASAMI |
分类号 |
H01L21/20;C30B25/10;(IPC1-7):C30B29/40;C30B25/02 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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