发明名称 Group III-V nitride semiconductor growth method and vapor phase growth apparatus
摘要 <p>A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10, nitrogen is introduced from the inlet 7, and no gas is let out from within the reaction ampoule 3.</p>
申请公布号 EP1065299(A2) 申请公布日期 2001.01.03
申请号 EP20000113814 申请日期 2000.06.29
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HIROTA, RYU;TATSUMI, MASAMI
分类号 H01L21/20;C30B25/10;(IPC1-7):C30B29/40;C30B25/02 主分类号 H01L21/20
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