COMPRESSION BONDED SEMICONDUCTOR DEVICE

摘要

To provide a compression bonded type semiconductor device capable of suppressing contact resistance of a power feeding path from an external gate electrode to an external cathode electrode, the device comprises a gate electrode 22a formed at the outer peripheral part of a gate electrode 22, a cathode electrode 22b formed at the inner part of the gate electrode 22, a cathode distortion buffer disk 23 and an external cathode electrode 24 disposed on the cathode electrode 22b, an elastic body 31, an annular insulator 33 and a press-contact auxiliary block 32 provided sequentially in contact with the external cathode electrode 24 between the external cathode electrode 24 and the gate electrode 22 and an external gate terminal 30 disposed so as to have a protrusion 30a whose one side contacts with the press-contact auxiliary block 32 and whose other side abuts to the gate electrode 22.