| 发明名称 |
Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof. |
| 摘要 |
<p>The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45<x<0.50, 0≤y≤1), an active layer 15, a p-type cladding layer 16 and a cover layer 17; a step of removing the cover layer 17 by etching to expose the surface of the p-type cladding layer 16; a step of integrally joining a minor-finished GaP substrate 11 on the p-type cladding layer 16 by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer 16; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate 12 to expose the n-type cladding layer 14; and a step of forming electrodes 19 on the surface of the n-type cladding layer 14 and on the back surface of the GaP substrate 11, respectively. <IMAGE></p> |
| 申请公布号 |
EP1065734(A2) |
申请公布日期 |
2001.01.03 |
| 申请号 |
EP20000304862 |
申请日期 |
2000.06.08 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUKAWA, KAZUYOSHI;AKAIKE, YASUHIKO;YOSHITAKE, SHUNJI |
| 分类号 |
H01L21/18;H01L33/00;H01L33/16;H01L33/20;(IPC1-7):H01L33/00;H01L21/20 |
主分类号 |
H01L21/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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