发明名称 Photoelectric conversion device and image sensor
摘要 To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions, and light-shielding units having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers, and second light-shielding layers formed on the first light-shielding layers via an interlevel insulating film. The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (12a) above the gaps of the first light-shielding layers.
申请公布号 US6169317(B1) 申请公布日期 2001.01.02
申请号 US19990247950 申请日期 1999.02.11
申请人 CANON KABUSHIKI KAISHA 发明人 SAWADA KOJI;KOZUKA HIRAKU;NISHIMURA SHIGERU
分类号 H01L27/146;(IPC1-7):H01L31/023 主分类号 H01L27/146
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