发明名称 |
Method for fabricating semiconductor device |
摘要 |
Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.
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申请公布号 |
US6168979(B1) |
申请公布日期 |
2001.01.02 |
申请号 |
US19990348572 |
申请日期 |
1999.07.07 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM HYUNG KI;LEE JONG WOOK |
分类号 |
H01L21/31;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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