| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided to improve a property of semiconductor device by improving a deposition material to restrain a parasitic resistance component according to a defining of a metal line. CONSTITUTION: A device isolation layer is formed on a device isolation region of a substrate. A gate and a source/drain structure are formed on a peripheral region and a cell region of a substrate and an oxide layer is formed between polysilicon. After opening a polysilicon contact by performing a mask and an etching process, a spacer oxide layer is formed on a sidewall. After the cleaning thereof, a polysilicon layer(8) is deposited on an entire surface of the resultant structure. A silicide layer(Msix:9) is formed on the resultant structure. In fabricating process of the silicide(Msix) out of a semiconductor device fabrication process, a SixHy is used as a Si raw materials of the silicide. A fire-resistant metal such as W, Ta, Ti, Mo, Nb, Zr or a near-noble metal such as Fe, Ru, Ni, Co, Ir, Pt, Pd, V is used as a metal of the silicide.
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