Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback

摘要

A process used in the fabrication of a self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS. The process involves using TEOS or Spin-On-Glass (SOG) silicon dioxide etchback in the fabrication of the SiGe BiCMOS device.