发明名称 Method of forming field emitter cell and array with vertical thin-film-edge emitter
摘要 A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.
申请公布号 US6168491(B1) 申请公布日期 2001.01.02
申请号 US19990448905 申请日期 1999.11.29
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 HSU DAVID S. Y.;GRAY HENRY F.
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址