| 发明名称 |
Method for producing barrier-free semiconductor memory configurations |
| 摘要 |
A method for producing an integrated semiconductor memory configuration, in particular uses ferroelectric materials as storage dielectrics. A conductive connection between a first electrode of a storage capacitor and a selection transistor is produced only after deposition of the storage dielectric.
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| 申请公布号 |
US6168988(B1) |
申请公布日期 |
2001.01.02 |
| 申请号 |
US19990281691 |
申请日期 |
1999.03.30 |
| 申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
SCHINDLER GUENTHER;HARTNER WALTER;HINTERMAIER FRANK;MAZURE-ESPEJO CARLOS |
| 分类号 |
H01L21/768;H01L21/02;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/10;H01L27/108;H01L27/115;(IPC1-7):H01L21/824;H01L21/00;H01L21/76 |
主分类号 |
H01L21/768 |
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