发明名称 Semiconductor memory device and data transfer circuit for transferring data between a DRAM and a SRAM
摘要 A semiconductor memory device is configured to include a static random access memory (SRAM) array and a dynamic random access memory (DRAM) array. The memory device includes an internal data line which enables the transfer of data blocks between the SRAM and DRAM arrays. Data transfer circuitry is provided separately from the internal data line and includes a latch circuit for latching the data to be transferred. The data transfer circuitry is responsive to a transfer designating signal.
申请公布号 US6170036(B1) 申请公布日期 2001.01.02
申请号 US19960780066 申请日期 1996.12.23
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KONISHI YASUHIRO;DOSAKA KATSUMI;HAYANO KOUJI;KUMANOYA MASAKI;YAMAZAKI AKIRA;IWAMOTO HISASHI
分类号 G06F12/08;G11C7/10;G11C11/00;(IPC1-7):G06F13/00;G11C11/407;G11C11/413 主分类号 G06F12/08
代理机构 代理人
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