发明名称 |
Method of solving metal stringer problem which is induced by the product of tin and organic ARC reaction |
摘要 |
A process for fabricating a sub-micron or deep sub-micron semiconductor device on a wafer surface with an improved anti-reflective coating is disclosed. It includes the steps of: (a) depositing an aluminum layer on a wafer surface; (b) depositing an inorganic anti-reflective layer TiN on top of the aluminum layer; (c) depositing a dielectric partitioning layer, typically a polymer layer, on top of the TiN layer; (d) depositing an organic anti-reflective layer on the dielectric partitioning layer; (e) depositing a photoresist on the organic anti-reflective layer; (f) performing a photolithography process to form a photoresist pattern using a deep UV technology in conjunction with a photomask; (g) removing the organic anti-reflective the and the dielectric partitioning layer not covered by the photoresist using an oxide etcher; and (h) removing the TiN layer and the metal layer also not covered by the photoresist using a metal etcher. This process eliminates the formation of an oxidized composition that can be formed at the interface between the TiN layer and the organic anti-reflective layer which can cause a decrease in production yield.
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申请公布号 |
US6169029(B1) |
申请公布日期 |
2001.01.02 |
申请号 |
US19990304472 |
申请日期 |
1999.05.03 |
申请人 |
WINBAND ELECTRONICS CORP. |
发明人 |
YANG CHING-SHENG |
分类号 |
G03F7/09;H01L21/027;H01L21/3213;(IPC1-7):H01L21/476;G03C5/00;H01L21/44 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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