发明名称 |
Photovoltaic devices comprising zinc stannate buffer layer and method for making |
摘要 |
A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
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申请公布号 |
US6169246(B1) |
申请公布日期 |
2001.01.02 |
申请号 |
US19980149430 |
申请日期 |
1998.09.08 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
WU XUANZHI;SHELDON PETER;COUTTS TIMOTHY J. |
分类号 |
H01L31/04;H01L31/0224;H01L31/0392;H01L31/072;H01L31/18;(IPC1-7):H01L31/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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