SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

摘要

A semiconductor device including an insulated-gate field-effect transistor has a gate electrode whose work function is well controlled to be close to the intrinsic mid-gap energy of silicon to reduce impurity concentration in the channel. The insulated-gate field-effect transistor thus prevents the carrier mobility from decreasing and provides higher current-carrying capacity. The gate electrode has a multilayer structure including a p-type polycrystalline or single-crystal germanium film (3) and a low-resistivity conductor film (4).