发明名称 |
IMPROVEMENTS RELATING TO PLASMA ETCHING |
摘要 |
A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a) forming a gas containing molecules having at least one methyl group (CH3) linked to nitrogen into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma. For a substrate whose elemental constituents are selected from Groups II and VI of the Periodic Table, the plasma etching gas used is trimethylamine. Since the methyl compound of nitrogen has a lower bond energy than for hydrocarbon mixtures, free methyl radicals are easier to obtain and the gas is more efficient as a methyl source. In addition, compared with hydrocarbon mixtures, reduced polymer formation can be expected due to preferential formation of methyl radicals over polymer-generating hydrocarbon radicals because of the lower bond energy for the former. |
申请公布号 |
WO0079578(A1) |
申请公布日期 |
2000.12.28 |
申请号 |
WO2000GB02255 |
申请日期 |
2000.06.21 |
申请人 |
SURFACE TECHNOLOGY SYSTEMS LIMITED;SRINIVASAN, ANAND;CARLSTROM, CARL-FREDRIK;LANDGREN, GUNNAR |
发明人 |
SRINIVASAN, ANAND;CARLSTROM, CARL-FREDRIK;LANDGREN, GUNNAR |
分类号 |
H05H1/46;H01L21/302;H01L21/306;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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