ABRASIVE COMPOUND FOR CMP, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE COMPOUND

摘要

An abrasive compound for CMP, characterized as comprising cerium oxide particles, a dispersant, an organic polymer containing an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on the surface of a film to be polished, and water; a method for polishing a substrate, characterized in that it comprises pressing a substrate having, formed thereon, a film to be polished to an abrasive surface plate and an abrasive cloth, and moving the substrate and the abrasive surface plate, while feeding the above CMP abrasive compound to between the abrasive cloth and the film to be polished; a method for manufacturing a semiconductor device characterized as comprising a step practicing the above method for polishing; and an additive for a CMP abrasive compound, characterized as comprising water and an organic polymer containing an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on the surface of a film to be polished.