| 摘要 |
<p>A diamond semiconductor device is provided which has a p-n junction for rectification at high temperature. A crystal layer (4) of n-type semiconductor diamond doped with sulfur as a donor is grown on a p-type semiconductor diamond crystal (2) formed of boron-doped high-pressure synthetic diamond or natural IIb diamond, for example, by a plasma CVD method to form a p-n junction (6). The p-n junction is capable of rectification at temperature as high as 500°C.</p> |
