| 摘要 |
<p>Precise writing of patterns in a resist requires precise exposure of the resist which, in turn, requires precise knowledge of the sensitivity of the resist to e-beam impact. Resist sensitivity depends upon the temperature of the resist at the time of writing. The temperature of the resist at time of writing is affected by the writing of nearby patterns by flashes that deposit heat into the substrate. The conduction of such heat to the resist being written changes the temperature and, therefore, the sensitivity of the resist. The present invention describes an apparatus to measure the temperature of the resist during exposure and change the characteristics of the beam in response to the measured temperature. An ellipsoidal mirror is used with the point of beam impact on the resist lying at one focus of the ellipsoid and a detector array lying at the other focus. Radiation emitted by the resist is reflected from the mirror, detected at the detectors and used to determine the temperature at the time of writing. The temperature so determined may then be used to adjust the characteristics of the writing beam.</p> |
