| 摘要 |
<p>A Single Heterojunction Bipolar Transistor employing a collector (3, 4) and base (5, 6) of InP, and an emitter (8, 9) of either a selected InxA11-xAsySb1-y compound, which preferably is lattice-matched to InP, or of a superlattice of ternary or binary compounds which mimic the selected InA1AsSb compound. The base-emitter junction is preferably graded, preferably by means of a chirped superlattice. Doping of the junction may be adjusted to include one or more delta doping layers to enhance the efficiency of the transistor.</p> |
