发明名称 |
Photo-conductive switch having an improved semiconductor structure |
摘要 |
<p>A PCS that comprises a photo-conductive layer of NB material sandwiched between a top confinement layer and a bottom confinement layer. Both confinement layers are layers of WB material. NB material and WB material are semiconductor materials. NB material has a smaller band-gap energy than WB material. The top confinement layer and the photo-conductive layer have opposite conductivity types. A first electrode and a second electrode, separated from each other by a gap and are located on the surface of the top confinement layer remote from the photo-conductive layer. The photo-conductive layer provides a low-resistance conduction path between the electrodes when the photo-conductive layer is illuminated with incident light of an appropriate wavelength and intensity. <IMAGE></p> |
申请公布号 |
EP1063708(A2) |
申请公布日期 |
2000.12.27 |
申请号 |
EP20000111582 |
申请日期 |
2000.05.30 |
申请人 |
AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION) |
发明人 |
LOW, THOMAS S.;KANEKO, YASUHISA;SAITO, MITSUCHIKA |
分类号 |
H01L31/08;G02F1/025;H01L31/0248;H01L31/0352;(IPC1-7):H01L31/08;H01L31/035 |
主分类号 |
H01L31/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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