| 发明名称 |
Backmetal drain terminal with low stress and thermal resistance |
| 摘要 |
<p>A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper. <IMAGE></p> |
| 申请公布号 |
EP1063701(A2) |
申请公布日期 |
2000.12.27 |
| 申请号 |
EP20000111300 |
申请日期 |
2000.05.25 |
| 申请人 |
INTERSIL CORPORATION |
发明人 |
GREBS, THOMAS;SPINDLER, JEFFREY;LAUFFER, JEFFREY;RIDLEY, RODNEY, SR.;CUMBO, JOSEPH |
| 分类号 |
H01L21/28;H01L21/334;H01L23/482;H01L29/78;(IPC1-7):H01L23/482 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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