| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the accuracy in measurement of impurity concentration distribution by accurately indicating the boundary surface between an impurity layer and a semiconductor layer. SOLUTION: In a method for measuring impurity concentration distribution, small pieces 12 and 13 are prepared from a semiconductor substrate, into which an impurity is introduced and the distribution of impurity concentration in the pieces 12 and 13 is measured 15 by utilizing the etching rates of the pieces 12 and 13 corresponding to the impurity concentration in the pieces 12 and 14 by etching 14 the pieces 12 and 13. The pieces 12 and 13 are formed, for example, into wedge-like shapes so that the piece 12 or 13 having smaller etching rate become thinner than the other piece 13 or 12 which has lager etching rate. Accordingly, etching of a semiconductor layer hardly progresses from the boundary surface between an impurity layer and the semiconductor layer, because the semiconductor layer is hardly exposed on the boundary surface due to the thickness of the impurity layer, for example even when the impurity layer is etched rapidly. Therefore, the boundary surface is apt to appear clearly as a ridgeline.</p> |
