| 摘要 |
<p>A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulae AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6,where 0≤x≤1.0 and 0≤y≤1.0; (BaxSr1-x)2(TayNb1-y)2O7, where 0≤x≤1.0 and 0≤y≤1.0; and(BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0≤x≤1.0 and 0≤y≤1.0. Thin films according to the invention have a relative dielectric constant ≥40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000ppm, preferably <100.</p> |
