| 摘要 |
<p>A first insulating layer (48) is deposited over the surface of a lower magnetic pole layer (32) including a raised upper auxiliary magnetic pole (39). A second insulating layer (51), which is less abrasive than the first insulating layer (48), is deposited on the surface of the first insulating layer (48), and the second insulating layer is flattened by grinding. Since grinding can be stopped at the second insulating layer (51) for each thin-film magnetic write, the first insulating layer (51) and the upper auxiliary magnetic pole (39) of predetermined thickness are surely maintained over the entire wafer.</p> |
