| 摘要 |
<p>A transistor device (12') having a plurality of transistor cells (15'). Each one of the cells has a control electrode (17) for controlling a flow of carriers through a semiconductor. The device (12') has an input node (20'). A plurality of filters (18') are provided. Each one of the filters (18') is coupled between the input node (20') and a corresponding one of the control electrodes (17) of the plurality of transistor cells (15'). In one embodiment of the invention, pairs of the control electrodes (17) are connected to a common region and wherein each one of the filters (18') is coupled between the input node (20') and a corresponding one of the common regions. The semiconductor provides a common active region for the plurality of transistor cells (15'). Each one of the filters (18') comprises: a conductive layer (40); a dielectric layer (42) disposed on the conductive layer (40); a resistive layer (44) disposed over the dielectric layer (42); a conductive electrode (46) disposed in electrical contact with a first portion (50) of the resistive layer (44) and providing the input node; and, a connector (52) in electrical contact with a second portion (54) of the resistive layer (44) such second portion (54) of the resistive layer (44) being displaced from the first portion (50) of the resistive layer (44), such connector (52) passing through the dielectric and being in electrical contact with the first conductor (40).</p> |
