| 摘要 |
<p>A method and apparatus for electroplating material, such as copper, into substrate formations is disclosed that substantially suppresses the electroplating of the material on the field of the substrate along the substrate surface plane. A current voltage source, applies current between a copper anode and the backside of the substrate wafer to support electroplating of material on the frontside of the substrate. Current flows through the substrate wafer to the frontside surface of the substrate wafer acting as a cathode of an electroplating circuit to provide charged copper through an electrolyte bath to electroplate the copper on the substrate. A membrane with the time modulation, conformed against the substrate surface plane, either continuously or intermittently suppresses electroplating of copper along the field regions of the substrate, resulting in a globally planarized surface without the use of chemical-mechanical polishing.</p> |
