A semiconductor device comprises a semiconductor layer (30) of a first conductivity type; a first unit cell (10) including a first semiconductor region (12) of the first conductivity type and a contact region (14), which are formed in the semiconductor layer (30); and a second unit cell (20) including a second semiconductor region (22) of a second conductivity type and a contact region (24), which are formed in the semiconductor layer (30). The first unit cell (10) and the second unit cell (20) cooperate to function as a diode element (100).
申请公布号
WO0077859(A1)
申请公布日期
2000.12.21
申请号
WO2000JP03884
申请日期
2000.06.14
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HIRATA, KYOKO;SHIMOMURA, HIROSHI