发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device comprises a semiconductor layer (30) of a first conductivity type; a first unit cell (10) including a first semiconductor region (12) of the first conductivity type and a contact region (14), which are formed in the semiconductor layer (30); and a second unit cell (20) including a second semiconductor region (22) of a second conductivity type and a contact region (24), which are formed in the semiconductor layer (30). The first unit cell (10) and the second unit cell (20) cooperate to function as a diode element (100).
申请公布号 WO0077859(A1) 申请公布日期 2000.12.21
申请号 WO2000JP03884 申请日期 2000.06.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HIRATA, KYOKO;SHIMOMURA, HIROSHI 发明人 HIRATA, KYOKO;SHIMOMURA, HIROSHI
分类号 H01L29/861;(IPC1-7):H01L29/861 主分类号 H01L29/861
代理机构 代理人
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