| 摘要 |
<p>An insulating layer (3) is formed on a semiconductor substrate (1) on which a gate electrode (22) and a source drain/region (12) are formed. Contact holes (41, 42) are formed in the insulating layer to expose the upper surfaces of the gate electrode and the source/drain region that are adjacent to each other. Conductor plugs (61, 62) are formed in these contact holes. A conductive film is formed immediately above the conductor plugs and the insulating layer. When the conductive film is etched to form a lower interconnection (7), a cover (8) consisting of the conductive film is formed on the conductor plug (61) that is not connected with this interconnection. This method prevents damage to the conductor plugs (61) and also requires a smaller number of processes steps for manufacture than the conventional method.</p> |
