Halbleiterbauelement mit Antifuse-Elektrodenanordnung und Verfahren zu seiner Herstellung

摘要

The semiconductor substrate (101) carries two electrodes (102, 106) to which voltage is applied and forms a transition from a high resistance to a low one between both electrodes. The electrode assembly contains a region of amorphous silicon (105). The electrode assembly is a four-layer lamination with a top electrode (106), the amorphous silicon region, a silicon insulating film (107), and a lower electrode. The lower electrode pref. consists of a dopant diffusion zone on the semiconductor substrate surface. Alternately, it is formed by a polycrystalline silicon. The amorphous silicon typically contains a dopant of the group III. USE/ADVANTAGE - For data memories, with resistance value equaling that of insulating material.