| 摘要 |
<p>A ferroelectric memory comprising an isolating substrate, a first conducting well and a second conducting well formed in the substrate, a first ferroelectric FET formed on the first conducting well and a second ferroelectric FET formed on the second conducting well, the isolating substrate electrically isolating the first well from the second well. A dedicated well conductor is electrically connected to each of said wells. In one embodiment, the first conducting well is a primary well, the isolating substrate comprises a secondary conducting well having a different type of conductivity than the first conducting well, and the first conducting well is formed in the second conducting well. The primary well comprises a virtual bottom electrode of the ferroelectric capacitor in the FET.</p> |
