发明名称 |
MODELLING ELECTRICAL CHARACTERISTICS OF THIN FILM TRANSISTORS |
摘要 |
A device and automated method of calculating bulk states information and interface states information of a thin film transistor from a current-voltage measurement and a capacitance-voltage measurement comprising the steps of: calculating the flat band voltage from the input capacitance-voltage measurement; applying a general expression of Gauss's Law and the calculated flat band voltage to a capacitance voltage relationship which defines capacitance so as to calculate a relationship between gate surface potential and gate/source voltage; applying Gauss's Law to the calculated relationship between gate surface potential and gate/source voltage to thereby calculate and ouput the interface states; calculating conductance/gate voltage data from the current-voltage measurement using the calculated flat band voltage; conducting an initialisation process using the calculated conductance/gate voltage data and the calculated relationship between gate surface potential and gate/source voltage, said initialisation process using a conductance equation so as to calculate initialised values for the electron conductance at the flat band voltage, for the hole conductance at the flat band voltage, for a density of states function and for the Fermi Energy; conducting an iteration process based on Poisson's equation using the said initialised values calculated by the initialisation process and the calculated conductance/gate voltage data to thereby calculate and output the bulk states information.
|
申请公布号 |
WO0077834(A2) |
申请公布日期 |
2000.12.21 |
申请号 |
WO2000GB02325 |
申请日期 |
2000.06.15 |
申请人 |
SEIKO EPSON CORPORATION;LUI, BASIL;MIGLIORATO, PIERO |
发明人 |
LUI, BASIL;MIGLIORATO, PIERO |
分类号 |
H01L29/00;G01R31/26;G01R31/28;G06F17/50;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|