发明名称 INTERMEDIATE BAND SEMICONDUCTOR PHOTOVOLTAIC SOLAR CELL
摘要 <p>The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, which is located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6, 7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to the improvement of photovoltaic devices.</p>
申请公布号 WO2000077829(A2) 申请公布日期 2000.12.21
申请号 ES2000000209 申请日期 2000.06.09
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