| 摘要 |
A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure (210) is interspersed throughout the trench MOSFET cell array (206, 212) to enhance the performance characteristics of the MOSFET switch. The forward voltage drop is reduced by taking advantage of the low barrier height of the Schottky structure. In a specific embodiment, the width of the trench is adjusted such that depletion in the drift region of the Schottky is influenced and controlled by the adjacent MOS structure to increase the reverse voltage capability of the Schottky diode.
|
