| 发明名称 |
Magneto-resistance effect element, and its use as memory element |
| 摘要 |
<p>A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.</p> |
| 申请公布号 |
EP1061592(A2) |
申请公布日期 |
2000.12.20 |
| 申请号 |
EP20000112886 |
申请日期 |
2000.06.19 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ODAGAWA, AKIHIRO;SAKAKIMA, HIROSHI;HIRAMOTO, MASAYOSHI;MATSUKAWA, NOZOMU |
| 分类号 |
G11B5/39;G01R33/09;G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/16;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):H01L43/08 |
主分类号 |
G11B5/39 |
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