| 发明名称 |
BIPOLAR TRANSISTOR WITH AN INSULATED GATE ELECTRODE |
| 摘要 |
<p>An IGBT is specified which can be produced in a simple manner yet can be turned on homogeneously. For this purpose, gate fingers are dispensed with and the gate current in the IGBT-Chip is forwarded, proceeding from the gate terminal, directly via the polysilicon layers of the gate electrodes to the IGBT standard cells.</p> |
| 申请公布号 |
EP1060517(A1) |
申请公布日期 |
2000.12.20 |
| 申请号 |
EP19990904672 |
申请日期 |
1999.02.25 |
| 申请人 |
ABB SEMICONDUCTORS AG |
发明人 |
BAUER, FRIEDHELM;ZELLER, HANS-RUDOLF |
| 分类号 |
H01L23/48;H01L23/482;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L29/739;H01L23/485 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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