发明名称 |
METHOD FOR FORMING RESIST PATTERN |
摘要 |
<p>In a process for manufacturing integrated circuit elements or the like by photolithography, a method for reducing detrimental influence on resist shape due to properties of a substrate or acidity of substrate surface in case where a chemically amplified resist or the like is used as a photoresist, and a substrate-treating agent composition to be used for this method are described. The substrate-treating agent composition comprises a solution containing a salt between at least one basic compound selected from among primary, secondary and tertiary amines and nitrogen-containing heterocyclic compounds and an organic acid such as a sulfonic acid or a carboxylic acid. This composition is coated on a substrate surface having thereon a bottom anti-reflective coating such as SiON layer, baked and, if necessary washed, then a chemically amplified resist is coated on the thus-treated substrate, exposed and developed to form a resist pattern on the substrate. <IMAGE></p> |
申请公布号 |
EP1061562(A1) |
申请公布日期 |
2000.12.20 |
申请号 |
EP19990972780 |
申请日期 |
1999.11.17 |
申请人 |
CLARIANT INTERNATIONAL LTD. |
发明人 |
KANG, WEN-BING;MATSUO, SHOKO;KIMURA, KEN;NISHIWAKI, YOSHINORI;TANAKA, HATSUYUKI |
分类号 |
G03F7/09;G03F7/004;G03F7/16;(IPC1-7):H01L21/027;G03F7/11;G03F7/38 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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