| 摘要 |
<p>When a mask (R) is irradiated obliquely with light (EL) from a lighting system, the light (EL) reflected from the mask (R) is projected onto a wafer (W) through a projection optical system (PO), and the pattern of the mask (R) is transferred to the wafer. If the magnification of the projection optical system (PO) changes because of a vertical movement of the mask (R), a control unit detects the projection position of the mask pattern image on a stage (WST) by a aerial image sensor (FM) and also detects a mark on the aerial image sensor (FM) by a mark detector (ALG) so as to determine the baseline of the mark detector. Thus, the positional shift of the projection position of the mask pattern image on the wafer due to the change in magnification is corrected to sufficiently restrict or prevent alignment inaccuracy involved in the change in magnification. <IMAGE></p> |
