发明名称 Process for plating metal parts of semiconductor devices
摘要 The process comprises, in succession, the application of a layer of tin to the metal parts, heating to a temperature such that at least one predetermined region of the tin is melted, and cooling to a temperature such that the tin melted in the preceding stage is solidified. To prevent short circuits between adjacent strips and damaging thermal shocks to the devices, the heating stage is carried out by means of laser radiation.
申请公布号 EP1061575(A1) 申请公布日期 2000.12.20
申请号 EP19990830368 申请日期 1999.06.15
申请人 STMICROELECTRONICS S.R.L. 发明人 CREMA, PAOLO
分类号 C25D5/50;H01L21/60;H01L23/495 主分类号 C25D5/50
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